Phase change memory cell with an upper amorphous nitride silicon germanium heating layer

Abstract

The advanced phase change memory (PCM) cell with an amorphous nitride silicon germanium (Si Gex Ny) upper heating layer was fabricated. Applying a proper height of reset voltage pulse to the cell, the amorphous Si Gex Ny heating layer was crystallized along with the melt of the Ge1 Sb2 Te4 layer. Then the Si Gex Ny heating layer preserved its crystalline state during the successive programming cycles. With this crystalline Si Gex Ny heating layer, the set and reset threshold voltage values were reduced, which enhanced the heat efficiency and decreased the power consumption of the PCM cell. Meanwhile, the PCM cell showed good endurance characteristics. © 2007 American Institute of Physics.