Epitaxial GaAs Kinetic Studies: {001} Orientation

Abstract

Gallium arsenide deposition rate studies were conducted with an open tube, chloride transport system which permitted independent control of the reactant input partial pressures. A recording microbalance was adapted to the depo- sition apparatus so that the epitaxial growth rates could be continuously mea- sured during the actual deposition process. At low temperatures and high re- actant partial pressures the process appears to be kinetically controlled. The rate then becomes inversely proportional to the gallium monochloride partial pressure and may indicate the presence of a competitive adsorption process. At high temperatures and low partial pressures the rates may be described in terms of a "quasi-equilibrium" model where a fraction of the incoming gas stream equilibrates with the condensed phase.