Magnetic and optical properties of GaMnN magnetic semiconductor

Abstract

Microcrystalline Ga1 - xMnxN samples with Mn content up to x=0.005 were grown by an ammonothermal method and were studied using various techniques. X-ray diffraction showed characteristic diffraction lines for hexagonal GaN phase mixed with a small contribution (<5%) from the Mn3N2 phase. Raman spectra exhibited characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. Electron spin resonance and magnetization measurements were consistent with the dominant Mn2+(d5) configuration of spin S = 5/2 which is responsible for the observed paramagnetic behavior of the GaMnN material. © 2001 American Institute of Physics.