Secondary ion mass spectrometry

Abstract

This chapter will introduce the analyst to secondary ion mass spectrometry (SIMS). Ion beam sputtering, instrumentation, analytical considerations, and actual analyses with mass spectra, depth profiles, and ion imaging will be discussed from the perspective of the instrument user. The analytical considerations will include static and dynamic SIMS, mass resolution, and quantitative analysis. Analyses will include examples of significant issues in depth profiling such as depth resolution, dynamic range, detection limits, crater topography, crystal orientation, and matrix effects. As this book is focusing on a multidisciplinary approach to surface analysis, examples of how SIMS interacts with the analytical techniques of SEM, TEM, AFM, RBS, XRD, and AES/ESCA have been noted throughout this chapter.