Abstract
A new method for extracting the threshold voltage of MOSFETs is presented. The threshold voltage is the gate voltage at which the second difference of the logarithm of the drain current takes a minimum value. The method is applied to a O.6-llm NMOSFET. The threshold voltage characteristics are compared with ones measured with previous methods and it is shown that the proposed method overcomes previous problems. The threshold voltage is extracted based on a physical background verified with 2D device simulation and shows a transition voltage at which drift and diffusion components in the drain current are equal.
Cite
CITATION STYLE
Aoyama, K. (1995). A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components. In Simulation of Semiconductor Devices and Processes (pp. 118–121). Springer Vienna. https://doi.org/10.1007/978-3-7091-6619-2_28
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