Surface Morphology Properties Doped RuO2 (0, 2, 4, 6%) of Thin Film LiNbO3

Abstract

Successful LiNbO3 film was prepared with the variation of 0%, 2%, 4%, and 6% RuO2 concentration and annealing temperature variation above the p-type silicon substrate (100), using the CSD method with the spin coating at 8000 rpm for 30 seconds in solubility 2 M. Films in annealing at 850 C for 8 hours with a temperature increase of 1.67 C/min. Samples were characterised using SEM and EDX spectrometer. We have obtained the morphology nonhomogenous surface and element stoichiometry. LiNbO3 thin film is a potential material for light sensors.