Abstract
The main radiation effects threatening the reliable functionality of CMOS Integrated Circuits (ICs) are presented evidencing how they scale in modern deep submicron technologies. Hardening By Design (HBD) techniques can be applied in commercial-grade CMOS leading to robust ICs capable of satisfying the requirements of space, avionics, nuclear and High Energy Physics (HEP) applications. These techniques are described and their respective advantages and inconveniences are discussed. © 2011 Springer Science+Business Media B.V.
Cite
CITATION STYLE
Faccio, F. (2011). Radiation effects and hardening by design in CMOS technologies. In Analog Circuit Design - Robust Design, Sigma Delta Converters, RFID (pp. 69–87). https://doi.org/10.1007/978-94-007-0391-9_5
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