A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.
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Pan, C. C., Yan, Q., Fu, H., Zhao, Y., Wu, Y. R., Van De Walle, C., … Denbaars, S. P. (2015). High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier. Electronics Letters, 51(15), 1187–1189. https://doi.org/10.1049/el.2015.1647