Abstract
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.
Cite
CITATION STYLE
APA
Chen, T. R., Chang, B., Chiu, L. C., Yu, K. L., Margalit, S., & Yariv, A. (1983). Carrier leakage and temperature dependence of InGaAsP lasers. Applied Physics Letters, 43(3), 217–218. https://doi.org/10.1063/1.94305
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