Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

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Abstract

We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1 S/mm and a cutoff frequency of 208 GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface. © IEICE 2006.

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Suemitsu, T., Fukai, Y. K., Tokumitsu, M., Rampazzo, F., Meneghesso, G., & Zanoni, E. (2006). Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electronics Express, 3(13), 310–315. https://doi.org/10.1587/elex.3.310

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