Heteroepitaxy on porous silicon

Abstract

The literature on epitaxial growth of different materials on porous silicon substrate has been surveyed. This field was stimulated by the theoretical prediction in 1986 of stress field and hence defect reduction in lattice-mismatched film grown on a mesoporous substrate. Data now exists not only on Ge, SiC, and diamond films but also on a range of both III-V and II-VI semiconductors, as well as other crystalline materials. Recently there has been most interest in GaN growth on porous silicon for optoelectronic applications.