Carrier Scattering at Low Fields

Abstract

Carrier scattering at low fields involve a large variety of scattering centers. Types of these scattering centeres are intrinsic lattice defects with acoustic or optical phonons, intrinsic point defects, alloys, extrinsic point defects with charged or neutral impurities; line defects; surface defects at grain boundaries, outer surfaces; metal/semiconductor interfaces. Three dimensional defects as atomic clusters or micro crystalline or colloidal inclusions; and secondary defects such as electron–electron scattering, electron–hole scattering or electron–plasmon scattering. Matthiessen rule is given. Intervalley and intravalley scattering and; warped surface effects are described. Quasi-particles as polarons or exciton interaction is discussed. Elastic and inelastic scattering is evaluated. Each of these scattering mechanisms are theoretically described. Phonon generation and annihilation is introduced. Longitudinal acoustic scattering are analyzed. Deformation potential table is given. Acoustic scattering with piezo electric interaction is shown. Optical phonon scattering in polar and non polar semiconductors are enumerated. Scattering by intrinsic point defects and by neutral defects, as well as by ionic defects are evaluated. Coulomb scattering in anisotropic semiconductors is discussed. Quantum correction for ion scattering is introduced. Carrier–carrier scattering is identified.