Nanoscale Mass-Spectrometry Imaging of Grain Boundaries in Perovskite Semiconductors

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Abstract

Incorporation of alkali metals such as Cs+, Rb+, and K+ into hybrid organic-inorganic halide lead perovskites (HOIPs) generally improves the optoelectronic properties of HOIPs. However, it is still uncertain how alkali metals interact and distribute within the HOIPs. There is also a struggle in finding a technique for nanometer-scale structural and chemical characterization without laborious sample preparation or risking severe beam damage of the material during characterization. Here, we have investigated the nanometer-scale distribution of alkali pairs (K-Cs, Rb-Cs, and K-Rb) incorporated into a HOIP using helium-ion microscopy coupled with secondary-ion mass spectrometry (HIM-SIMS) that allows for nanometer-scale elemental and morphological imaging at an unprecedented spatial resolution. HIM-SIMS analysis reveals that Rb segregates at perovskite grain boundaries irrespective of whether it is paired with Cs or K.

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Usiobo, O. J., Kanda, H., Gratia, P., Zimmermann, I., Wirtz, T., Nazeeruddin, M. K., & Audinot, J. N. (2020). Nanoscale Mass-Spectrometry Imaging of Grain Boundaries in Perovskite Semiconductors. Journal of Physical Chemistry C, 124(42), 23230–23236. https://doi.org/10.1021/acs.jpcc.0c07464

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