Abstract
The Schottky diode characteristics of inductively coupled plasma (ICP) exposure GaN were investigated. N2 discharges produce more degradation in VB than H2 discharges, which implicates ion mass as the main factor. The electrical damage depth is 500-600 angstroms. The diode characteristics are almost restored by post-plasma annealing at 750 °C.
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CITATION STYLE
APA
Cao, X. A., Cho, H., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., … Van Hove, J. M. (1999). Depth and thermal stability of dry etch damage in GaN Schottky diodes. Applied Physics Letters, 75(2), 232–234. https://doi.org/10.1063/1.124332
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