Monte Carlo study on number of scattering events for quasi-ballistic transport in MOSFETs

Abstract

Role of scattering has been discussed as scattering still controls drain current of decananometer MOSFET's, including the number of scattering events per unit length or gate length. Nevertheless, as scattering mechanisms have various angular dependences, in this paper, meanings of 'number' of scattering events are discussed and 'effective' scattering number is introduced to interpret quasi-ballistic transport. This concept is shown to be useful to understand the quasi ballistic transport and the role of various scattering mechanisms especially when back-scattering is not negligible.