Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Abstract

The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition. Chemical mechanical polishing provides a path for tuning the dimensions of tunnel junctions by adjusting the polish time, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials. Single-electron transistor operation of a prototype device was successfully demonstrated at T < 1 K.