Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs

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Abstract

Single-dot-wide rows of InAs quantum dots (QDs) aligned along a [011] direction on a 180-nm-period nanoscale-patterned (nanopatterned) GaAs(100) substrate are reported. The nanopatterned substrate is realized by interferometric lithography along with the selective growth mode of GaAs. Orientation-dependent migration and incorporation of In atoms from (111)A to (100) facets on the nanopatterned substrate localizes QD formation exclusively along a 30-40-nm-wide (100) facet defined by neighboring (111)A-type facets within each period. These aligned QDs form face-to-face multi-QDs analogous to multi-quantum-well structures, in a one-dimensional configuration. Spatially controlled formation of QDs with an improved size uniformity on the nanopatterned substrate is presented. © 2001 American Institute of Physics.

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Lee, S. C., Dawson, L. R., Malloy, K. J., & Brueck, S. R. J. (2001). Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs. Applied Physics Letters, 79(16), 2630–2632. https://doi.org/10.1063/1.1409947

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