Skip to main content
Journal ArticleOPEN ACCESS

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Nanoscale Research Letters (2015) 10(1) 1-6
DOI: 10.1186/s11671-015-0973-5
16Citations
Citations of this article
17Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.

Figures

  • Fig. 1 a AFM image of the SQDs. b AFM image of the TQDs. c QD height distribution of the SQDs and TQDs. d XTEM image of the sample B
  • Fig. 2 Low-temperature (10 K) PL spectra obtained with a low laser excitation intensity of 30 mW/cm2 for (a) sample A and (b) sample B. The inset shows the schematic diagram of the band structure of sample A and sample B, respectively
  • Fig. 3 Low-temperature PL spectra of (a) sample A and (b) sample B as a function of the excitation laser intensity. The insets show the PL intensity ratio R of the E1 emission to the E0 emission (R = E1 emission/E0 emission × 100 %) as a function of the excitation laser intensity
  • Fig. 4 Low-temperature PL spectra of (a) sample A and (b) sample B meas intensity ratio R as a function of excitation laser wavelength
  • Fig. 5 TRPL results for the SQDs and TQDs for both sample A and sample B

Author supplied keywords

References Powered by Scopus

An all-optical quantum gate in a semiconductor quantum dot

Science
885Citations
N/AReaders
Get full text

Coupling and entangling of quantum states in quantum dot molecules

Science
792Citations
N/AReaders
Get full text

Optical signatures of coupled quantum dots

Science
444Citations
N/AReaders
Get full text
View more at Scopus

Cited by Powered by Scopus

Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar

Nanoscale Research Letters
33Citations
N/AReaders
Get full text

Efficiency enhancement through flat intermediate band in Quantum dot solar cell

Results in Physics
19Citations
N/AReaders
Get full text

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

Journal of Luminescence
15Citations
N/AReaders
Get full text
View more at Scopus

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Liu, Y., Liang, B., Guo, Q., Wang, S., Fu, G., Fu, N., … Salamo, G. J. (2015). Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer. Nanoscale Research Letters, 10(1), 1–6. https://doi.org/10.1186/s11671-015-0973-5

Readers over time

‘15‘16‘17‘18‘19‘20‘22‘2301234

Readers' Seniority

Tooltip

Researcher 5

42%

PhD / Post grad / Masters / Doc 4

33%

Professor / Associate Prof. 2

17%

Lecturer / Post doc 1

8%

Readers' Discipline

Tooltip

Physics and Astronomy 4

40%

Materials Science 3

30%

Engineering 2

20%

Philosophy 1

10%

Save time finding and organizing research with Mendeley

Sign up for free
0