Micro and Nano Structural Characterization Of SiC

Abstract

For the last decades, substantial research has been focused on the development of Silicon Carbide electronic devices thanks to its outperformance over Silicon. A review of the author’s recent results on the microstructure of SiC layers studied by Transmission ElectronMicroscopy is presented in the currentwork. Structural defects appearing in epilayers grown by different methods will be presented. The studied samples were grown by different means-from vapour phase techniques such as Physical Vapour Transport, Chemical Vapour Deposition and Sublimation Epitaxy.