We study the carrier dynamics in planar methyl ammonium lead iodide perovskite films using broadband transient absorption spectroscopy. We show that the sharp optical absorption onset is due to an exciton transition that is inhomogeneously broadened with a binding energy of 9 meV. We fully characterize the transient absorption spectrum by free-carrier-induced bleaching of the exciton transition, quasi-Fermi energy, carrier temperature and bandgap renormalization constant. The photo-induced carrier temperature is extracted from the transient absorption spectra and monitored as a function of delay time for different excitation wavelengths and photon fluences. We find an efficient hot-phonon bottleneck that slows down cooling of hot carriers by three to four orders of magnitude in time above a critical injection carrier density of 1/45 × 10 17 cm 3. Compared with molecular beam epitaxially grown GaAs, the critical density is an order of magnitude lower and the relaxation time is approximately three orders of magnitude longer.
Yang, Y., Ostrowski, D. P., France, R. M., Zhu, K., Van De Lagemaat, J., Luther, J. M., & Beard, M. C. (2016). Observation of a hot-phonon bottleneck in lead-iodide perovskites. Nature Photonics, 10(1), 53–59. https://doi.org/10.1038/nphoton.2015.213