A Review on Nanoporous Gallium Nitride (NPGaN) Formation on P-Type Silicon Substrate with the Mather-type Plasma Focus Device (MPFD)

Abstract

A Mather-type plasma focus device (MPFD) was unitized to fabricated porous gallium nitride (GaN) on p-type silicon (Si) substrate with a <100> crystal orientation for the first time in a deposition process. GaN was deposited on Si with four and seven shots. The samples went through a three phase annealing procedure. First, the semiconductors were annealed in the PFD with nitrogen plasma shots after their deposition, second, a thermal chemical vapor deposition (TCVD) annealed the samples for 1 at 1050 °C by nitrogen gas at 1 Pa pressure. Finally, an electric furnace annealed the samples for 1 h at 1150 °C with continues flow of nitrogen. Porous GaN structures were observed by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Furthermore, X-ray diffraction (XRD) analyze was carried out to determine the crystallinity of GaN after the samples were annealed. Energy-dispersive X-ray spectroscopy (EDX) indicated the amount of gallium, nitrogen, and oxygen due to self-oxidation of the samples. Photoluminescence (PL) spectroscopy revealed emissions at 2.94 and 3.39 eV which shows hexagonal wurtzite crystal structures was formed.