Preparation of CuInS2 thin films by one-step electrodeposition

Abstract

I-III-VI2 ternary chalcopyrite copper indium disulfide (CuInS2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV. © Editorial office of Acta Physico-Chimica Sinica.