Self-Assembled Monolayers (SAMs)/Al2O3Double Layer Passivated InSnZnO Thin-Film Transistor

Abstract

We fabricated high-performance InSnZnO (ITZO) thin-film transistors (TFTs) with self-assembled monolayers (SAMs)/Al2O3 double passivation layers (PVLs). The presented SAMs/Al2O3 double passivation leads to high-performance ITZO TFTs with a steep subthreshold slope (85 mV/dec), a low threshold voltage (0.9 V), high mobility (19.8 cm ^{2}\text{V}^{-1}\text{s}^{-1} ), and high on-off current ratio ( \sim 8.7\times 10^{9} ). Moreover, compared to devices with Al2O3PVL, ITZO TFTs with SAMs/Al2O3 double PVLs show better stability in ambient air with a relative humidity of 60% under positive bias stress (PBS) and negative bias stress (NBS). This enhanced stability is attributed to the presence of a high-quality SAM/Al2O3 dual PVL, which not only inhibits Vo-related trap sites and reduces overall trap density, but also protects the back-channel from environmental influences.