GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates.
CITATION STYLE
Li, X., Hemmingsson, C., Forsberg, U., Janzén, E., & Pozina, G. (2015). Properties of GaN layers grown on N-face free-standing GaN substrates. Journal of Crystal Growth, 413, 81–85. https://doi.org/10.1016/j.jcrysgro.2014.11.020
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