Curvature-corrected low-noise sub-bandgap reference in 28 nm CMOS technology

Abstract

A sub-bandgap circuit architecture employed to achieve a precision reference in 28 nm CMOS technology is described. The 500 mV voltage reference exhibits < 10 ppm/°C drift from .40 to 125°C and 5.5 ìV of root-mean-square (RMS) noise in a 0.1-10 Hz bandwidth, dissipates 500 ìWof power on a 1.2 V supply and occupies 0.09 mm². © 2014 The Institution of Engineering and Technology.