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X-RAY DIFFRACTION STUDY OF SELF-IMPLANTED SILICON.

DOI: 10.1007/978-1-4615-7682-2_344
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Abstract

Damage and lattice disorder in self-ion implanted silicon crystals before and after thermal annealing processes are analyzed using X-ray diffraction. (333) Bragg reflection profiles (CuK alpha 1) were recorded from the samples with a high resolution triple-crystal diffractometer.

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Tapfer, L., & Alt, H. C. (1985). X-RAY DIFFRACTION STUDY OF SELF-IMPLANTED SILICON. (pp. 1509–1512). Springer-Verlag. https://doi.org/10.1007/978-1-4615-7682-2_344

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