Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide

Abstract

Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the experimental data and this comparison provides insight into the DEZn doping mechanism of InP on the atomic level.