Porous silicon and electrochemical deposition

Abstract

Porous silicon is a promising template for the preparation of metal nanostructures by electrochemical deposition. Because porous silicon is a semiconductive porous electrode, electrochemical deposition of metals occurs not only at the bottom of pores but also on the pore wall and pore openings. Thus, the control of electrochemical deposition within porous silicon has been a challenging issue. Electrochemical deposition on porous silicon is influenced by illumination conditions. Metal deposition on porous silicon is possible by displacement deposition. Many studies have reported on electrochemical deposition of metal for practical applications. In this chapter, electrodeposition under polarization is firstly reviewed. Secondly, displacement deposition on porous silicon is explained. Finally, the microscopic structure formation by electrodeposition on porous silicon is summarized.