Redox-based memristive devices

Abstract

Over the past few decades, MOSFET-based nonvolatile memories have played a significant role in the growth of the portable electronic market. However, aggressive device scaling trends are about to reach their limits. In the quest for the next generation nonvolatile memory device, several mechanisms such as redox-based, phase-change, magnetic-junction, and ferroelectrics have recently been extensively investigated. A highly promising candidate that is expected to succeed the flash memory device is the redox-based resistive random access memory (ReRAM). The fundamental requirements of a nonvolatile memory are nondestructive write/read operations at a speed comparable to current logic devices, infinite retention, low energy consumption, and integration capability with the current CMOS process. In this chapter, we will describe the current understanding of the physical mechanism of redox-based resistive switching and address several technological aspects of metal-oxide ReRAMs.