Negative magnetoresistance behaviours and localized magnetic moments in insulating CdSe semiconductor at very low temperatures with magnetic field

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Abstract

We present results of an experimental study of magnetoresistance (MR) in insulating CdSe sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (1.5-7 K) and in the range of moderate magnetic fields (0 - 2.1T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moments. © 2010 American Institute of Physics.

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El Kaaouachi, A., Abdia, R., Nafidi, A., Zatni, A., Sahsah, H., & Biskupski, G. (2010). Negative magnetoresistance behaviours and localized magnetic moments in insulating CdSe semiconductor at very low temperatures with magnetic field. In AIP Conference Proceedings (Vol. 1219, pp. 83–91). https://doi.org/10.1063/1.3402337

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