Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Abstract

In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.