Exposure to solvent vapours for enhanced N-type OTFT stability

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Abstract

To achieve commercialization of organic electronics, the field must see an improvement in both performance and material stability while maintaining a low cost of fabrication. To achieve this, low-cost additives provide a viable solution. A variety of additives containing amine and silane functional groups were tested to determine their impact on the performance and air-stability of n-type semiconductor poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) in organic thin film transistors. Aniline and pyridine were found to both have a minimal impact on P(NDI2OD-T2) performance in an inert environment, but to improve stability of electron mobility and threshold voltage in air. Therefore, these compounds, or other compounds based on their structure, would be ideal candidates as additives for the improvement of n-type transistors.

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Brixi, S., Lamontagne, H. R., King, B., Shuhendler, A. J., & Lessard, B. H. (2023). Exposure to solvent vapours for enhanced N-type OTFT stability. Materials Advances, 4(20), 4707–4711. https://doi.org/10.1039/d3ma00402c

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