Ultralow Power 8T Subthreshold SRAM Cell

Abstract

Static Random Access Memory (SRAM) is an important component in these systems therefore ultralow power SRAM has become popular. An Eight-transistor (8T) SRAM cell achieved high data stability in subthreshold operation. The single ended with dynamic feedback control 8T SRAM Cell was implemented with less power consumption verified at all process corners. The standard deviation and mean calculations performed for static noise margins by using Monte Carlo simulation at 300, mV in cadence 45, nm technology.