Abstract
The use of micromechanical resonant structures in RF electronics possessesoften a problem caused by a very low signal amplitude. In order toalleviate the influence of parasitic capacitance we propose herethe use of the differential amplifier and demonstrate its use hereon the processed electrostatically driven resonators. The componentused in verifying the use of differential amplifier is a clamped-clampedbeam resonator with Q=8000 and resonant frequency of fo=12.3MHz.A low-noise high input-impedance amplifier was used as a reference.
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CITATION STYLE
Rantakari, P., Kiihamäki, J., Koskenvuori, M., Lamminmäki, T., & Tittonen, I. (2001). Reducing the Effect of Parasitic Capacitance on MEMS Measurements. In Transducers ’01 Eurosensors XV (pp. 1528–1531). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-59497-7_361
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