Abstract
SiGe employment is, for the first time, proposed to enhance band-to-band-tunneling-induced hot electron injection (BBHE) in a p-channel flash by the analysis made with two dimensional device simulator MEDICI. Simulation results show that more than 100 times enhancement in the programming speed can be achieved in a proposed p-channel flash with 40% Ge in the surface SiGe channel. In addition, a Si-cap layer and HfO2 tunnel dielectric are also incorporated to improve the interface quality. Up to 1000 times enhancement in BBHE injection programming speed is achieved in the case of a p-channel flash memory with surface SiGe layer and HfO2 tunnel dielectric.
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CITATION STYLE
Wang, C. C., Chang-Liao, K. S., Lu, C. Y., & Wang, T. K. (2007). Enhanced band-to-band tunneling-induced-hot-electron injection in P-channel flash by SiGe channel and HfO2 tunnel dielectric. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 357–360). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_86
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