Charge carriers in high-mobility organic thin-film transistors of alkylated dinaphtho-thienothiophene (C10-DNTT) have been directly observed by field-induced electron spin resonance (FI-ESR) down to 4 K. FI-ESR spectra of π-electron hole carriers of C10-DNTT exhibited clear anisotropy, indicating a highly organized end-on molecular orientation at the device interface. The intra-grain and inter-grain carrier motion were probed by the motional narrowing effect of the ESR spectra. The intra-grain motion was clearly observed even at 4 K, showing intrinsically high mobility of C10-DNTT crystallites. On the other hand, significantly low activation energy of ∼10 meV for inter-grain carrier hopping, compared with pristine DNTT, was observed, which shows that the alkyl substitution drastically enhances the carrier mobility of DNTT system.
CITATION STYLE
Kinoshita, Y., Tanaka, H., Shimoi, Y., Takimiya, K., & Kuroda, S. I. (2014). Low-temperature carrier dynamics in high-mobility organic transistors of alkylated dinaphtho-thienothiophene as investigated by electron spin resonance. Applied Physics Letters, 105(3). https://doi.org/10.1063/1.4890962
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