Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β -Ga2O3

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Abstract

We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measurements. Numerous (010) β-Ga2O3 layers grown at different conditions showed peak electron mobility exceeding 104 cm2/V s at low temperature (LT), with the highest value of 11 704 cm2/V s at 46 K. The room temperature electron mobilities of the films were between 125 cm2/V s and 160 cm2/V s with the net background charge concentration between ∼5 × 1015 cm-3 and ∼2 × 10&b.

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Alema, F., Zhang, Y., Osinsky, A., Valente, N., Mauze, A., Itoh, T., & Speck, J. S. (2019). Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β -Ga2O3. APL Materials, 7(12). https://doi.org/10.1063/1.5132954

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