Gate modulation of graphene-ZnO nanowire schottky diode

Abstract

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V g). The ideality factor of the graphene/ZnO nanowire Schottky diode is ∼1.7, and the Schottky barrier height is ∼0.28 eV without external V g. The Schottky barrier height is sensitive to V g due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping V g towards the negative value, while decreases slowly towards the positive V g. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.