High photoresponsivity of multilayer MoSe2 phototransistors decorated with Au nanoseeds

Abstract

In this paper, we report the fabrication and photoresponsive characteristics of MoSe2 phototransistors decorated with Au nanoseeds. The Au nanoseeds were excellently deposited onto the MoSe2 phototransistors by electron-beam evaporation with an extremely low deposition rate. This simple but effective method improved the photoresponsivity of the MoSe2 phototransistor by 276% compared to that of a pristine MoSe2 phototransistor, owing to the surface plasmon resonance effect of the Au nanoseeds. The results reveal that this method can provide a promising route for achieving high-performance photosensors.