Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.
CITATION STYLE
Dasgupta, S., Rajashekhar, A., Majumdar, K., Agrawal, N., Razavieh, A., Trolier-Mckinstry, S., & Datta, S. (2015). Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, 43–48. https://doi.org/10.1109/JXCDC.2015.2448414
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