This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III--V semiconductor nanostructures and heterostructures.
Sales, D. L., Beltrán, A. M., Lozano, J. G., Mánuel, J. M., Guerrero-Lebrero, M. P., Ben, T., … Molina, S. I. (2012). High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures (pp. 23–62). https://doi.org/10.1007/978-3-642-23351-7_2