The Influence of Boron Dopant on the Structural and Mechanical Properties of Silicon: First Principles Study

0Citations
Citations of this article
3Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Boron (B) is usually used to produce p-type silicon to form the base layer in wafer-based silicon solar cells. The main objective of this work is to investigate the influence of B doping on the structural and mechanical properties of silicon. Using CASTEP program, which uses the density functional theory (DFT), with a plane wave basis, the structural, electronic, and mechanical properties of pure Si and the solid solution Si1−xBx (0.0001≤x≤0.05) were studied. The structure, density of states, band structure, and elastic properties were computed. It is found that as B concentration increases, the lattice constant increases, Bulk modulus (B), Shear modulus (G), and Young modulus (E) decreases. The ratio G/B decreases and Poisson’s ratio (ν) increases. The decrease of G/B and increase of ν mean that brittleness of Si decreases by increasing B concentration.

Author supplied keywords

Cite

CITATION STYLE

APA

Ikhmayies, S., & Çiftci, Y. (2019). The Influence of Boron Dopant on the Structural and Mechanical Properties of Silicon: First Principles Study. In Minerals, Metals and Materials Series (pp. 191–199). Springer International Publishing. https://doi.org/10.1007/978-3-030-06209-5_20

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free