Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well

Abstract

We have used the 830 nm, subpicosecond output of a mode-locked Ti:sapphire laser, together with subpicosecond 3.55 μm pulses from a synchronously pumped optical parametric oscillator, to perform room-temperature, time-resolved, differential transmission measurements on a multiple quantum well structure with AlGaSb barriers and GaInSb/InAs superlattice wells. From these measurements, we have determined a Shockley-Read-Hall rate of 2.4×108 s-1 and an Auger coefficient of 7×10-27 cm6/s. In addition, we estimate the carrier capture efficiency into the wells to be ∼52% and have demonstrated that carrier cooling, cross-well transport, and capture are complete within ∼10 ps after excitation. © 1996 American Institute of Physics.