Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model

Abstract

In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.