IR spectra of ICPCVD SiNx thin films for MEMS structures

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Abstract

Optical properties of non-stoichiometric silicon nitride (SiNx) films for thermo sensitive membranes of microelectromechanical systems (MEMS) and microoptomechanical systems (MOMS) has been studied applying infrared (IR) spectroscopy. For the structures SiNx/Si and (thin metal layer)/SiNx/Si transmission and reflection spectra in the region of wave numbers of 500-7000 cm-1 has been investigated. For the investigated structures analysis of optical properties observed in the IR spectra both in the form of selective absorption bands and interference modulation of a baseline was conducted.

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Rudakov, G., & Reshetnikov, I. (2015). IR spectra of ICPCVD SiNx thin films for MEMS structures. In Journal of Physics: Conference Series (Vol. 643). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/643/1/012063

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