Design of GaSb-based monolithic passive photonic devices at wavelengths above 2 µm

Abstract

In this paper, we report, for the first time, a theoretical study on passive photonic devices including optical power splitters/combiners and grating couplers (GCs) operating at non-telecom wavelengths above 2 µm in a monolithic GaSb platform. Passive components were designed to operate, in particular, at around 2.6 µm for monolithic integration with active photonic devices on the III-V gallium antimonide material platform. The three popular types of splitters/combiners such as directional couplers, multimode interferometer-, and Y-branch-couplers were theoretically investigated. Based on our optimized design and rigorous analysis, fabrication-compatible 1 × 2 optical power splitters with less than 0.12 dB excess losses, large spectral bandwidth, and a 50:50 splitting ratio are achieved. For fiber-to-chip coupling, we also report the design of GCs with an outcoupling efficiency of ∼29% at 2.56 μm and a 3 dB bandwidth of 80 nm. The results represent a significant step towards developing a complete functional photonic integrated circuits at mid-wave infrared wavelengths.