Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

Abstract

Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN esxhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.