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Germanium photodetectors on amorphous substrates for back-end-of-line process integration

Optics InfoBase Conference Papers (2016)
DOI: 10.1364/ACPC.2016.AS3E.1
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Abstract

Germanium photodetector are fabricated on silicon dioxide at 350C in order to demonstrate monolithic compatibility with back-end-of-line CMOS manufacturing. Final MSM photodetectors demonstrate a net gain with an internal quantum efficiency greater than 100%.

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Michel, J. (2016). Germanium photodetectors on amorphous substrates for back-end-of-line process integration. In Optics InfoBase Conference Papers. Optica Publishing Group (formerly OSA). https://doi.org/10.1364/ACPC.2016.AS3E.1

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