Electronic transport properties of microcrystalline GaP

Abstract

Electronic properties of microcrystalline gallium phosphide films deposited on fused silica substrates by plasma-enhanced atomic layer deposition at the temperature of 380°C were investigated. The values of the activation energy of conductivity (Ea = 0.247 eV), the optical value of the band gap (Eg = 2.2 eV) and the long-wavelength edge of photoconductivity (Eph = 1.8 eV) were obtained for this material. The value of Ea could associated with position of Fermi level near to the bottom of the conduction band or barriers at the grain boundaries. The long-wavelength edge of photoconductivity in the layer of microcrystalline GaP is a consequence of the presence of interband states, which are associated with partially disordering.