Understanding the Growth Kinetics of Graphene on Cu and Fe 2 O 3 Using Inductively-Coupled Plasma Chemical Vapor Deposition

Abstract

High-quality graphene was synthesized on Cu foil and Fe(2)O(3) film using CH(4) gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on Fe(2)O(3) at a temperature as low as 700�C. Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe(2)O(3), respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.